First Order, Quasi-Static, SOI Charge Conserving Power Dissipation Model
نویسندگان
چکیده
Conventional MOS models for circuit simulation assume that the channel capacitances do not contribute to net power dissipation. Numerical integration of channel currents and instantaneous terminal voltages however shows the existence of higher order dissipating terms. To overcome these limitations, we present a self-consistent, first order, quasi-static power dissipation model that is able to predict dissipative (transport) and conserved (charging) current components. Charge conservation is insured by using the current continuity equation. An analytical expression for energy stored in the channel is derived by separating out current components that contribute to net power dissipation. The power dissipation estimation is made computationally efficient by leaving out energy conserving terms.
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